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PESD2IVN24-T
PESD2IVN24-T - ESD protection device in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package designed to protect two automotive In-vehicle network bus lines from the damage caused by ElectroStatic discharge (ESD) and other transients.PESD18VF1BL
PESD18VF1BL - Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in a DFN1006-2 (SOD882) leadless ultra small Surface-Mounted Device (SMD) plastic package designed to protect one signal line from the damage caused by ESD and othertransients.
74AUP1G125GW
74AUP1G125GW - The 74AUP1G125 is a single buffer/line driver with 3-state output. Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times. This device ensures very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V. This device is fully specified for partial power down applications using IOFF.NX7002AK - NEXPERIA
NX7002AK in°2nBctQ6=6;]Vw6SaaBcNmdABnAnBenF Nexperia NX7002AK 60 V, single N-channel Trench MOSFET All information provided in this document is subject to legal disclaimers. Product data sheet 6 August2015 2 / 16
NX3008PBK 30 V, 230 MA P-CHANNEL TRENCH MOSFET NX3008PBK All information provided in this document is subject to legal disclaimers. 2 J 0 8;*+ Product data sheet Rev. 1 — 1 August2011 2 of 16
PMEG045V100EPD
PMEG045V100EPD 45 V, 10 A low VF MEGA Schottky barrier rectifier 4 December 2014 Product data sheet 1. General description Planar MaximumEfficiency General
BUK9832-55A N-CHANNEL TRENCHMOS LOGIC LEVEL FET BUK9832-55A N-channel TrenchMOS logic level FET Rev. 02 — 1 June 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel PMEG3005EB; PMEG3005EL 0.5 A VERY LOW V F MEGA SCHOTTKY PMEG3005EB_PMEG3005EL_1 Product data sheet Rev. 01 — 29 November 2006 3 of 10 Nexperia PMEG3005EB; PMEG3005EL 0.5 A very low VF MEGA Schottky barrier rectifiers 5. Limiting values Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-platedand standard
NEXPERIAPRODUCTSAPPLICATIONSPACKAGESQUALITYSUPPORTCAREERS Nexperia is a global semiconductor company - expert in high-volume production of diodes, bipolar transistors, ESD protection devices, MOSFETs, GaN FETs and analog & logic ICs that meet the stringent standards set by the Automotive industry. CROSS MULTIPLE PARTS You can now change your Nexperia preferences in My Nexperia! These preferences will determine which change notifications you get to see on the change notification pages and in your mail. Default preferences will be used if you do not change any settings. This will mean you see all product change notifications for a single random location underPESD18VF1BL
PESD18VF1BL - Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in a DFN1006-2 (SOD882) leadless ultra small Surface-Mounted Device (SMD) plastic package designed to protect one signal line from the damage caused by ESD and othertransients.
PESD2IVN24-T
PESD2IVN24-T - ESD protection device in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package designed to protect two automotive In-vehicle network bus lines from the damage caused by ElectroStatic discharge (ESD) and other transients.74AUP1G125GW
74AUP1G125GW - The 74AUP1G125 is a single buffer/line driver with 3-state output. Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times. This device ensures very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V. This device is fully specified for partial power down applications using IOFF.NX7002AK - NEXPERIA
NX7002AK in°2nBctQ6=6;]Vw6SaaBcNmdABnAnBenF Nexperia NX7002AK 60 V, single N-channel Trench MOSFET All information provided in this document is subject to legal disclaimers. Product data sheet 6 August2015 2 / 16
NX3008PBK 30 V, 230 MA P-CHANNEL TRENCH MOSFET NX3008PBK All information provided in this document is subject to legal disclaimers. 2 J 0 8;*+ Product data sheet Rev. 1 — 1 August2011 2 of 16
PMEG045V100EPD
PMEG045V100EPD 45 V, 10 A low VF MEGA Schottky barrier rectifier 4 December 2014 Product data sheet 1. General description Planar MaximumEfficiency General
BUK9832-55A N-CHANNEL TRENCHMOS LOGIC LEVEL FET BUK9832-55A N-channel TrenchMOS logic level FET Rev. 02 — 1 June 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel PMEG3005EB; PMEG3005EL 0.5 A VERY LOW V F MEGA SCHOTTKY PMEG3005EB_PMEG3005EL_1 Product data sheet Rev. 01 — 29 November 2006 3 of 10 Nexperia PMEG3005EB; PMEG3005EL 0.5 A very low VF MEGA Schottky barrier rectifiers 5. Limiting values Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-platedand standard
LOGIN | NEXPERIA
You can change your Change Notification (CN) preferences in MyNexperia. These preferences set your CN view in MyNexperia and the CN emails. By default you CROSS MULTIPLE PARTS You can now change your Nexperia preferences in My Nexperia! These preferences will determine which change notifications you get to see on the change notification pages and in your mail. Default preferences will be used if you do not change any settings. This will mean you see all product change notifications for a single random location under SEARCH RESULTS FOR "I " The IP4220CZ6 is designed to protect I/O lines sensitive to capacitive load, such as USB 2.0, ethernet, Digital Video Interface (DVI) and soon, from damage
SEARCH RESULTS FOR "U " ESD protection for In-vehicle networks. ESD protection device in a small SOT323 (SC70) Surface-Mounted Device (SMD) plastic package designed to protect two automotive In-vehicle network SEARCH RESULTS FOR "V " v Nexperia search results. Thanks to the rise of powerful motors which can be driven by a heavy duty lithium battery that can be charged quickly, cordless devices are quickly PNS40010ER - 400 V, 1 A HIGH POWER DENSITY, STANDARD PNS40010ER. 400 V, 1 A high power density, standard switching time recovery rectifier. Automotive qualified. High power density, standard switching time recovery rectifier with high-efficiency planar technology, encapsulated in a small and flat lead SOD123W Surface-Mounted Device (SMD) plastic package. Download datasheet. SEARCH RESULTS FOR "G " The GAN041-650WSB is a 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package. It is a normally-off device that combines Nexperia’slatest high-voltage
SEARCH RESULTS FOR "K " k Nexperia search results. This interactive application note aims to give some general insights into how to drive a DC motor using Nexperia Power MOSFET devices.BUK7S1R0-40H
BUK7S1R0-40H - Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in a copper-clip LFPAK88 package. This product has been fully designed and qualified to meet beyond AEC-Q101 requirements BAV99W-Q - HIGH-SPEED SWITCHING DIODE BAV99W-Q - High-speed switching double diode, encapsulated in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NEXPERIAPRODUCTSAPPLICATIONSPACKAGESQUALITYSUPPORTCAREERS Nexperia is a global semiconductor company - expert in high-volume production of diodes, bipolar transistors, ESD protection devices, MOSFETs, GaN FETs and analog & logic ICs that meet the stringent standards set by the Automotive industry. CROSS MULTIPLE PARTS You can now change your Nexperia preferences in My Nexperia! These preferences will determine which change notifications you get to see on the change notification pages and in your mail. Default preferences will be used if you do not change any settings. This will mean you see all product change notifications for a single random location underPESD2IVN24-T
PESD2IVN24-T - ESD protection device in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package designed to protect two automotive In-vehicle network bus lines from the damage caused by ElectroStatic discharge (ESD) and other transients.PESD18VF1BL
PESD18VF1BL - Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in a DFN1006-2 (SOD882) leadless ultra small Surface-Mounted Device (SMD) plastic package designed to protect one signal line from the damage caused by ESD and othertransients.
74AUP1G125GW
74AUP1G125GW - The 74AUP1G125 is a single buffer/line driver with 3-state output. Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times. This device ensures very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V. This device is fully specified for partial power down applications using IOFF.NX7002AK - NEXPERIA
NX7002AK in°2nBctQ6=6;]Vw6SaaBcNmdABnAnBenF Nexperia NX7002AK 60 V, single N-channel Trench MOSFET All information provided in this document is subject to legal disclaimers. Product data sheet 6 August2015 2 / 16
NX3008PBK 30 V, 230 MA P-CHANNEL TRENCH MOSFET NX3008PBK All information provided in this document is subject to legal disclaimers. 2 J 0 8;*+ Product data sheet Rev. 1 — 1 August2011 2 of 16
PMEG045V100EPD
PMEG045V100EPD 45 V, 10 A low VF MEGA Schottky barrier rectifier 4 December 2014 Product data sheet 1. General description Planar MaximumEfficiency General
BUK9832-55A N-CHANNEL TRENCHMOS LOGIC LEVEL FET BUK9832-55A N-channel TrenchMOS logic level FET Rev. 02 — 1 June 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel PMEG3005EB; PMEG3005EL 0.5 A VERY LOW V F MEGA SCHOTTKY PMEG3005EB_PMEG3005EL_1 Product data sheet Rev. 01 — 29 November 2006 3 of 10 Nexperia PMEG3005EB; PMEG3005EL 0.5 A very low VF MEGA Schottky barrier rectifiers 5. Limiting values Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-platedand standard
NEXPERIAPRODUCTSAPPLICATIONSPACKAGESQUALITYSUPPORTCAREERS Nexperia is a global semiconductor company - expert in high-volume production of diodes, bipolar transistors, ESD protection devices, MOSFETs, GaN FETs and analog & logic ICs that meet the stringent standards set by the Automotive industry. CROSS MULTIPLE PARTS You can now change your Nexperia preferences in My Nexperia! These preferences will determine which change notifications you get to see on the change notification pages and in your mail. Default preferences will be used if you do not change any settings. This will mean you see all product change notifications for a single random location underPESD2IVN24-T
PESD2IVN24-T - ESD protection device in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package designed to protect two automotive In-vehicle network bus lines from the damage caused by ElectroStatic discharge (ESD) and other transients.PESD18VF1BL
PESD18VF1BL - Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in a DFN1006-2 (SOD882) leadless ultra small Surface-Mounted Device (SMD) plastic package designed to protect one signal line from the damage caused by ESD and othertransients.
74AUP1G125GW
74AUP1G125GW - The 74AUP1G125 is a single buffer/line driver with 3-state output. Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times. This device ensures very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V. This device is fully specified for partial power down applications using IOFF.NX7002AK - NEXPERIA
NX7002AK in°2nBctQ6=6;]Vw6SaaBcNmdABnAnBenF Nexperia NX7002AK 60 V, single N-channel Trench MOSFET All information provided in this document is subject to legal disclaimers. Product data sheet 6 August2015 2 / 16
NX3008PBK 30 V, 230 MA P-CHANNEL TRENCH MOSFET NX3008PBK All information provided in this document is subject to legal disclaimers. 2 J 0 8;*+ Product data sheet Rev. 1 — 1 August2011 2 of 16
PMEG045V100EPD
PMEG045V100EPD 45 V, 10 A low VF MEGA Schottky barrier rectifier 4 December 2014 Product data sheet 1. General description Planar MaximumEfficiency General
BUK9832-55A N-CHANNEL TRENCHMOS LOGIC LEVEL FET BUK9832-55A N-channel TrenchMOS logic level FET Rev. 02 — 1 June 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel PMEG3005EB; PMEG3005EL 0.5 A VERY LOW V F MEGA SCHOTTKY PMEG3005EB_PMEG3005EL_1 Product data sheet Rev. 01 — 29 November 2006 3 of 10 Nexperia PMEG3005EB; PMEG3005EL 0.5 A very low VF MEGA Schottky barrier rectifiers 5. Limiting values Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-platedand standard
LOGIN | NEXPERIA
You can change your Change Notification (CN) preferences in MyNexperia. These preferences set your CN view in MyNexperia and the CN emails. By default you CROSS MULTIPLE PARTS You can now change your Nexperia preferences in My Nexperia! These preferences will determine which change notifications you get to see on the change notification pages and in your mail. Default preferences will be used if you do not change any settings. This will mean you see all product change notifications for a single random location under SEARCH RESULTS FOR "I " The IP4220CZ6 is designed to protect I/O lines sensitive to capacitive load, such as USB 2.0, ethernet, Digital Video Interface (DVI) and soon, from damage
SEARCH RESULTS FOR "U " ESD protection for In-vehicle networks. ESD protection device in a small SOT323 (SC70) Surface-Mounted Device (SMD) plastic package designed to protect two automotive In-vehicle network SEARCH RESULTS FOR "V " v Nexperia search results. Thanks to the rise of powerful motors which can be driven by a heavy duty lithium battery that can be charged quickly, cordless devices are quickly PNS40010ER - 400 V, 1 A HIGH POWER DENSITY, STANDARD PNS40010ER. 400 V, 1 A high power density, standard switching time recovery rectifier. Automotive qualified. High power density, standard switching time recovery rectifier with high-efficiency planar technology, encapsulated in a small and flat lead SOD123W Surface-Mounted Device (SMD) plastic package. Download datasheet. SEARCH RESULTS FOR "G " The GAN041-650WSB is a 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package. It is a normally-off device that combines Nexperia’slatest high-voltage
SEARCH RESULTS FOR "K " k Nexperia search results. This interactive application note aims to give some general insights into how to drive a DC motor using Nexperia Power MOSFET devices.BUK7S1R0-40H
BUK7S1R0-40H - Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in a copper-clip LFPAK88 package. This product has been fully designed and qualified to meet beyond AEC-Q101 requirements BAV99W-Q - HIGH-SPEED SWITCHING DIODE BAV99W-Q - High-speed switching double diode, encapsulated in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. THIS WEBSITE USES COOKIES We use cookies to offer you a better browsing experience and analyze site traffic. Read about how we use cookies and how you can control them by clicking on 'settings'. Use necessary cookies only OK SettingsOK
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BIPOLAR TRANSISTORS
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Mar 11, 2020
GETTING ESD PROTECTION RIGHT FOR USB4™ At the beginning of September last year, the USB Implementers Forum (USB-IF) announced the ...* Blog article
Mar 10, 2020
TACKLING THERMAL RUNAWAY IN SCHOTTKY RECTIFIERS Given the unique operating conditions found in automotive electronics, thermal runaway can ...* Press release
Mar 10, 2020
NEXPERIA DELIVERS FIRST ESD PROTECTION DEVICE FOR USB4 TrEOS diodes fully support USB4TM standard; devices feature low clamping, low capacitance, low ...* Blog article
Mar 6, 2020
2020 AUTONOMOUS VEHICLE TECHNOLOGY REPORT The guide to understanding the state of the art in hardware & software for self-driving ...* Press release
Feb 25, 2020
NEXPERIA PARTNERS WITH RICARDO TO DEVELOP GAN-BASED ... Nexperia’s AEC-Q101-approved GaN devices to feature in technology demonstrator by leading ...* Blog article
Feb 13, 2020
SEED DELIVERS OPEN ALLIANCE COMPLIANT ESD PROTECTION The transmission requirements and data payload on automotive networks has and continues to ... Efficiency Wins blog Read allpress releases
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