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UJ3N120065K3S
UJ3N120065K3S. UnitedSiC offers the high-performance G3 SiC normally-on JFET transistors. This series exhibits ultra-low on resistance (RDS (ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS (ON) at VGS = 0 V is also ideal for current protection circuitswithout the
UNITED SILICON CARBIDE INC. UJN1205K UJN1205K. United Silicon Carbide, Inc offers the xJ series of high-performance. SiC normally-on JFET transistors. This series exhibits ultra-low on resistance (RDS (ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS (ON) at VGS = 0 V is also ideal forcurrent protection
UF3C065040K3S
UF3C065040K3S. United Silicon Carbide’s FET products co-package its high-. performance G3 SiC JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings.UF3C120150B7S
UF3C120150B7S. This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si DATASHEET DESCRIPTION UF3N170400Z UNITED SILICON CARBIDE DS(ON)) and gate charge (Q G) allowing for low conduction and switching loss. The device normally-on characteristics with low R DS(ON) at V GS = 0 V is also ideal for current protection circuits without the need for active control, as well as for cascode operation. UTILIZING SILICON CARBIDE IN 80 PLUS CURRENT AVERAGE POWER Application Note USCi_AN0008– July 2016 Utilizing Silicon Carbide in 80 Plus Current Average Power Factor Correction John Bendel USCi_AN0008 – July 2016 Utilizing Silicon Carbide in 80 Plus Current Average Power Factor Correction 1 DATASHEET DESCRIPTION UF3C170400K3S Maximum Ratings Symbol Value Units V DS 1700 V GS-25 to +25 7.6 A 5.9 A I DM 14 A E AS 11.7 mJ P tot 100 W T J,max 175 °C T J, T STG-55 to 175 °C T L 250 °C 1. Limited by T J,max 2. Pulse width t p limited by T J,max 3. Starting T DATASHEET DESCRIPTION UJ3C065030B3 Maximum Ratings Symbol Value Units V DS 650 V GS-25 to +25 65 A 47 A I DM 230 A E AS 120 mJ P tot 242 W T J,max 175 °C T J, T STG-55 to 175 C T solder 260 °C 1. Limited by T J,max 2. Pulse width t p limited by T J,max 3. Starting T DESCRIPTION UF3C065040K4S Maximum Ratings Symbol Value Units V DS 650 V GS-25 to +25 54 A 40 A I DM 125 A E AS 76 mJ P tot 326 W T J,max 175 °C T J, T STG-55 to 175 C T L 250 °C 1. Limited by T J,max 2. Pulse width t p limited by TJ,max 3. Starting T
UNITED SILICON CARBIDE INC. HOMEPAGE Introducing the industry’s first 750V high-performance SiC FETs. Watch Now. ‹. ›. “The evolution of this power supply has created ever-greater benefits for our customers, particularly with respect to energy savings. Efficiency and reliability are paramount for them and this latest design, with the support of UnitedSiC products, excelsUJ3N120065K3S
UJ3N120065K3S. UnitedSiC offers the high-performance G3 SiC normally-on JFET transistors. This series exhibits ultra-low on resistance (RDS (ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS (ON) at VGS = 0 V is also ideal for current protection circuitswithout the
UNITED SILICON CARBIDE INC. UJN1205K UJN1205K. United Silicon Carbide, Inc offers the xJ series of high-performance. SiC normally-on JFET transistors. This series exhibits ultra-low on resistance (RDS (ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS (ON) at VGS = 0 V is also ideal forcurrent protection
UF3C065040K3S
UF3C065040K3S. United Silicon Carbide’s FET products co-package its high-. performance G3 SiC JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings.UF3C120150B7S
UF3C120150B7S. This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si DATASHEET DESCRIPTION UF3N170400Z UNITED SILICON CARBIDE DS(ON)) and gate charge (Q G) allowing for low conduction and switching loss. The device normally-on characteristics with low R DS(ON) at V GS = 0 V is also ideal for current protection circuits without the need for active control, as well as for cascode operation. UTILIZING SILICON CARBIDE IN 80 PLUS CURRENT AVERAGE POWER Application Note USCi_AN0008– July 2016 Utilizing Silicon Carbide in 80 Plus Current Average Power Factor Correction John Bendel USCi_AN0008 – July 2016 Utilizing Silicon Carbide in 80 Plus Current Average Power Factor Correction 1 DATASHEET DESCRIPTION UF3C170400K3S Maximum Ratings Symbol Value Units V DS 1700 V GS-25 to +25 7.6 A 5.9 A I DM 14 A E AS 11.7 mJ P tot 100 W T J,max 175 °C T J, T STG-55 to 175 °C T L 250 °C 1. Limited by T J,max 2. Pulse width t p limited by T J,max 3. Starting T DATASHEET DESCRIPTION UJ3C065030B3 Maximum Ratings Symbol Value Units V DS 650 V GS-25 to +25 65 A 47 A I DM 230 A E AS 120 mJ P tot 242 W T J,max 175 °C T J, T STG-55 to 175 C T solder 260 °C 1. Limited by T J,max 2. Pulse width t p limited by T J,max 3. Starting T DESCRIPTION UF3C065040K4S Maximum Ratings Symbol Value Units V DS 650 V GS-25 to +25 54 A 40 A I DM 125 A E AS 76 mJ P tot 326 W T J,max 175 °C T J, T STG-55 to 175 C T L 250 °C 1. Limited by T J,max 2. Pulse width t p limited by TJ,max 3. Starting T
UNITED SILICON CARBIDE INC. UJN1205K UJN1205K. United Silicon Carbide, Inc offers the xJ series of high-performance. SiC normally-on JFET transistors. This series exhibits ultra-low on resistance (RDS (ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS (ON) at VGS = 0 V is also ideal forcurrent protection
UNITED SILICON CARBIDE, INC. AEC-Q101 PRODUCT Autoclave (PCT) JESD22 A-102 121°C/ RH = 100%, 96 hours, 15psig 77x10 lots 0/770 Parametric Verification Per Datasheet 100% FT x 9 lotsPhysical
UJ3N120035K3S
UJ3N120035K3S. United Silicon Carbide, Inc offers the high-performance G3 SiC. normally-on JFET transistors. This series exhibits ultra-low on resistance (RDS (ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS (ON) at VGS = 0 V is also ideal for current protection 3L ANP VS. 3L NP INVERTERS APPLICATION NOTE UnitedSiC_AN0023 – February 2020 Jonathan Dodge is a Senior Applications Engineer at United Silicon Carbide. Experience includes design of analog, digital,UJ4C075018K4S
UJ4C075018K4S. The UJ4C075018K4S is a 750V, 18mΩ Gen 4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to SiIGBTs, Si
UNITED SILICON CARBIDE INC. UJ3D1250K2 UJ3D1250K2. UnitedSiC offers the 3rd generation of high performance SiC Merged PiN-Schottky (MPS) diodes. With zero reverse recovery charge and 175°C maximum junction temperature, these diodes are ideally suited for high frequency and high efficiency power systems with minimum cooling requirements.UF3SC120009K4S
UF3SC120009K4S. This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si DATASHEET DESCRIPTION UF3SC120009K4S Maximum Ratings Symbol Value Units V DS 1200 V GS-20 to +20 I D 120 A I DM 550 A E AS 555 mJ P tot 789 W T J,max 175 °C T J, T STG-55 to 175 °C 1. Limited by bondwires 2. Pulse width t p limited by T J,max 3. Starting T J = 25°C DATASHEET DESCRIPTION UF3C065030K3S w Switch mode power supplies. w Power factor correction modules: 650V-27mW SiC FET. w Low intrinsic capacitance: DATASHEET. UF3C065030K3S. 3 CASE 1 2 CASE D (2) DATASHEET DESCRIPTION UF3C065080B3 Maximum Ratings Symbol Value Units V DS 650 V GS-25 to +25 25 A 18.2 A I DM 65 A E AS 33 mJ P tot 115 W T J,max 175 °C T J, T STG-55 to 175 C T solder 260 °C 1. Limited by T J,max 2. Pulse width t p limited by T J,max 3. Starting T UNITED SILICON CARBIDE INC. HOMEPAGE Introducing the industry’s first 750V high-performance SiC FETs. Watch Now. ‹. ›. “The evolution of this power supply has created ever-greater benefits for our customers, particularly with respect to energy savings. Efficiency and reliability are paramount for them and this latest design, with the support of UnitedSiC products, excelsUJ3N120065K3S
UJ3N120065K3S. UnitedSiC offers the high-performance G3 SiC normally-on JFET transistors. This series exhibits ultra-low on resistance (RDS (ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS (ON) at VGS = 0 V is also ideal for current protection circuitswithout the
UNITED SILICON CARBIDE INC. UJN1205K UJN1205K. United Silicon Carbide, Inc offers the xJ series of high-performance. SiC normally-on JFET transistors. This series exhibits ultra-low on resistance (RDS (ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS (ON) at VGS = 0 V is also ideal forcurrent protection
UF3C065040K3S
UF3C065040K3S. United Silicon Carbide’s FET products co-package its high-. performance G3 SiC JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings.UF3C120150B7S
UF3C120150B7S. This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si DATASHEET DESCRIPTION UF3N170400Z UNITED SILICON CARBIDE DS(ON)) and gate charge (Q G) allowing for low conduction and switching loss. The device normally-on characteristics with low R DS(ON) at V GS = 0 V is also ideal for current protection circuits without the need for active control, as well as for cascode operation. UTILIZING SILICON CARBIDE IN 80 PLUS CURRENT AVERAGE POWER Application Note USCi_AN0008– July 2016 Utilizing Silicon Carbide in 80 Plus Current Average Power Factor Correction John Bendel USCi_AN0008 – July 2016 Utilizing Silicon Carbide in 80 Plus Current Average Power Factor Correction 1 DATASHEET DESCRIPTION UF3C170400K3S Maximum Ratings Symbol Value Units V DS 1700 V GS-25 to +25 7.6 A 5.9 A I DM 14 A E AS 11.7 mJ P tot 100 W T J,max 175 °C T J, T STG-55 to 175 °C T L 250 °C 1. Limited by T J,max 2. Pulse width t p limited by T J,max 3. Starting T DATASHEET DESCRIPTION UJ3C065030B3 Maximum Ratings Symbol Value Units V DS 650 V GS-25 to +25 65 A 47 A I DM 230 A E AS 120 mJ P tot 242 W T J,max 175 °C T J, T STG-55 to 175 C T solder 260 °C 1. Limited by T J,max 2. Pulse width t p limited by T J,max 3. Starting T DESCRIPTION UF3C065040K4S Maximum Ratings Symbol Value Units V DS 650 V GS-25 to +25 54 A 40 A I DM 125 A E AS 76 mJ P tot 326 W T J,max 175 °C T J, T STG-55 to 175 C T L 250 °C 1. Limited by T J,max 2. Pulse width t p limited by TJ,max 3. Starting T
UNITED SILICON CARBIDE INC. HOMEPAGE Introducing the industry’s first 750V high-performance SiC FETs. Watch Now. ‹. ›. “The evolution of this power supply has created ever-greater benefits for our customers, particularly with respect to energy savings. Efficiency and reliability are paramount for them and this latest design, with the support of UnitedSiC products, excelsUJ3N120065K3S
UJ3N120065K3S. UnitedSiC offers the high-performance G3 SiC normally-on JFET transistors. This series exhibits ultra-low on resistance (RDS (ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS (ON) at VGS = 0 V is also ideal for current protection circuitswithout the
UNITED SILICON CARBIDE INC. UJN1205K UJN1205K. United Silicon Carbide, Inc offers the xJ series of high-performance. SiC normally-on JFET transistors. This series exhibits ultra-low on resistance (RDS (ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS (ON) at VGS = 0 V is also ideal forcurrent protection
UF3C065040K3S
UF3C065040K3S. United Silicon Carbide’s FET products co-package its high-. performance G3 SiC JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings.UF3C120150B7S
UF3C120150B7S. This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si DATASHEET DESCRIPTION UF3N170400Z UNITED SILICON CARBIDE DS(ON)) and gate charge (Q G) allowing for low conduction and switching loss. The device normally-on characteristics with low R DS(ON) at V GS = 0 V is also ideal for current protection circuits without the need for active control, as well as for cascode operation. UTILIZING SILICON CARBIDE IN 80 PLUS CURRENT AVERAGE POWER Application Note USCi_AN0008– July 2016 Utilizing Silicon Carbide in 80 Plus Current Average Power Factor Correction John Bendel USCi_AN0008 – July 2016 Utilizing Silicon Carbide in 80 Plus Current Average Power Factor Correction 1 DATASHEET DESCRIPTION UF3C170400K3S Maximum Ratings Symbol Value Units V DS 1700 V GS-25 to +25 7.6 A 5.9 A I DM 14 A E AS 11.7 mJ P tot 100 W T J,max 175 °C T J, T STG-55 to 175 °C T L 250 °C 1. Limited by T J,max 2. Pulse width t p limited by T J,max 3. Starting T DATASHEET DESCRIPTION UJ3C065030B3 Maximum Ratings Symbol Value Units V DS 650 V GS-25 to +25 65 A 47 A I DM 230 A E AS 120 mJ P tot 242 W T J,max 175 °C T J, T STG-55 to 175 C T solder 260 °C 1. Limited by T J,max 2. Pulse width t p limited by T J,max 3. Starting T DESCRIPTION UF3C065040K4S Maximum Ratings Symbol Value Units V DS 650 V GS-25 to +25 54 A 40 A I DM 125 A E AS 76 mJ P tot 326 W T J,max 175 °C T J, T STG-55 to 175 C T L 250 °C 1. Limited by T J,max 2. Pulse width t p limited by TJ,max 3. Starting T
UNITED SILICON CARBIDE INC. UJN1205K UJN1205K. United Silicon Carbide, Inc offers the xJ series of high-performance. SiC normally-on JFET transistors. This series exhibits ultra-low on resistance (RDS (ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS (ON) at VGS = 0 V is also ideal forcurrent protection
UNITED SILICON CARBIDE, INC. AEC-Q101 PRODUCT Autoclave (PCT) JESD22 A-102 121°C/ RH = 100%, 96 hours, 15psig 77x10 lots 0/770 Parametric Verification Per Datasheet 100% FT x 9 lotsPhysical
UJ3N120035K3S
UJ3N120035K3S. United Silicon Carbide, Inc offers the high-performance G3 SiC. normally-on JFET transistors. This series exhibits ultra-low on resistance (RDS (ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS (ON) at VGS = 0 V is also ideal for current protection 3L ANP VS. 3L NP INVERTERS APPLICATION NOTE UnitedSiC_AN0023 – February 2020 Jonathan Dodge is a Senior Applications Engineer at United Silicon Carbide. Experience includes design of analog, digital,UJ4C075018K4S
UJ4C075018K4S. The UJ4C075018K4S is a 750V, 18mΩ Gen 4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to SiIGBTs, Si
UNITED SILICON CARBIDE INC. UJ3D1250K2 UJ3D1250K2. UnitedSiC offers the 3rd generation of high performance SiC Merged PiN-Schottky (MPS) diodes. With zero reverse recovery charge and 175°C maximum junction temperature, these diodes are ideally suited for high frequency and high efficiency power systems with minimum cooling requirements.UF3SC120009K4S
UF3SC120009K4S. This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si DATASHEET DESCRIPTION UF3SC120009K4S Maximum Ratings Symbol Value Units V DS 1200 V GS-20 to +20 I D 120 A I DM 550 A E AS 555 mJ P tot 789 W T J,max 175 °C T J, T STG-55 to 175 °C 1. Limited by bondwires 2. Pulse width t p limited by T J,max 3. Starting T J = 25°C DATASHEET DESCRIPTION UF3C065030K3S w Switch mode power supplies. w Power factor correction modules: 650V-27mW SiC FET. w Low intrinsic capacitance: DATASHEET. UF3C065030K3S. 3 CASE 1 2 CASE D (2) DATASHEET DESCRIPTION UF3C065080B3 Maximum Ratings Symbol Value Units V DS 650 V GS-25 to +25 25 A 18.2 A I DM 65 A E AS 33 mJ P tot 115 W T J,max 175 °C T J, T STG-55 to 175 C T solder 260 °C 1. Limited by T J,max 2. Pulse width t p limited by T J,max 3. Starting T UNITED SILICON CARBIDE INC. HOMEPAGE Introducing the industry’s first 750V high-performance SiC FETs. Watch Now. ‹. ›. “The evolution of this power supply has created ever-greater benefits for our customers, particularly with respect to energy savings. Efficiency and reliability are paramount for them and this latest design, with the support of UnitedSiC products, excelsUF3C065040K3S
UF3C065040K3S. United Silicon Carbide’s FET products co-package its high-. performance G3 SiC JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings. 3L ANP VS. 3L NP INVERTERS APPLICATION NOTE UnitedSiC_AN0023 – February 2020 Jonathan Dodge is a Senior Applications Engineer at United Silicon Carbide. Experience includes design of analog, digital, UNITED SILICON CARBIDE INC. UF3SC120016K3S UF3SC120016K3S. This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or SiUF3C120150B7S
UF3C120150B7S. This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si DATASHEET DESCRIPTION UF3N170400Z UNITED SILICON CARBIDE DS(ON)) and gate charge (Q G) allowing for low conduction and switching loss. The device normally-on characteristics with low R DS(ON) at V GS = 0 V is also ideal for current protection circuits without the need for active control, as well as for cascode operation. DATASHEET DESCRIPTION UF3C170400K3S Maximum Ratings Symbol Value Units V DS 1700 V GS-25 to +25 7.6 A 5.9 A I DM 14 A E AS 11.7 mJ P tot 100 W T J,max 175 °C T J, T STG-55 to 175 °C T L 250 °C 1. Limited by T J,max 2. Pulse width t p limited by T J,max 3. Starting T DATASHEET DESCRIPTION UJ3C065030B3 Maximum Ratings Symbol Value Units V DS 650 V GS-25 to +25 65 A 47 A I DM 230 A E AS 120 mJ P tot 242 W T J,max 175 °C T J, T STG-55 to 175 C T solder 260 °C 1. Limited by T J,max 2. Pulse width t p limited by T J,max 3. Starting T DATASHEET DESCRIPTION UF3C065030K3S w Switch mode power supplies. w Power factor correction modules: 650V-27mW SiC FET. w Low intrinsic capacitance: DATASHEET. UF3C065030K3S. 3 CASE 1 2 CASE D (2) DESCRIPTION UF3C065040K4S Maximum Ratings Symbol Value Units V DS 650 V GS-25 to +25 54 A 40 A I DM 125 A E AS 76 mJ P tot 326 W T J,max 175 °C T J, T STG-55 to 175 C T L 250 °C 1. Limited by T J,max 2. Pulse width t p limited by TJ,max 3. Starting T
UNITED SILICON CARBIDE INC. HOMEPAGE Introducing the industry’s first 750V high-performance SiC FETs. Watch Now. ‹. ›. “The evolution of this power supply has created ever-greater benefits for our customers, particularly with respect to energy savings. Efficiency and reliability are paramount for them and this latest design, with the support of UnitedSiC products, excelsUF3C065040K3S
UF3C065040K3S. United Silicon Carbide’s FET products co-package its high-. performance G3 SiC JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings. 3L ANP VS. 3L NP INVERTERS APPLICATION NOTE UnitedSiC_AN0023 – February 2020 Jonathan Dodge is a Senior Applications Engineer at United Silicon Carbide. Experience includes design of analog, digital, UNITED SILICON CARBIDE INC. UF3SC120016K3S UF3SC120016K3S. This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or SiUF3C120150B7S
UF3C120150B7S. This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si DATASHEET DESCRIPTION UF3N170400Z UNITED SILICON CARBIDE DS(ON)) and gate charge (Q G) allowing for low conduction and switching loss. The device normally-on characteristics with low R DS(ON) at V GS = 0 V is also ideal for current protection circuits without the need for active control, as well as for cascode operation. DATASHEET DESCRIPTION UF3C170400K3S Maximum Ratings Symbol Value Units V DS 1700 V GS-25 to +25 7.6 A 5.9 A I DM 14 A E AS 11.7 mJ P tot 100 W T J,max 175 °C T J, T STG-55 to 175 °C T L 250 °C 1. Limited by T J,max 2. Pulse width t p limited by T J,max 3. Starting T DATASHEET DESCRIPTION UJ3C065030B3 Maximum Ratings Symbol Value Units V DS 650 V GS-25 to +25 65 A 47 A I DM 230 A E AS 120 mJ P tot 242 W T J,max 175 °C T J, T STG-55 to 175 C T solder 260 °C 1. Limited by T J,max 2. Pulse width t p limited by T J,max 3. Starting T DATASHEET DESCRIPTION UF3C065030K3S w Switch mode power supplies. w Power factor correction modules: 650V-27mW SiC FET. w Low intrinsic capacitance: DATASHEET. UF3C065030K3S. 3 CASE 1 2 CASE D (2) DESCRIPTION UF3C065040K4S Maximum Ratings Symbol Value Units V DS 650 V GS-25 to +25 54 A 40 A I DM 125 A E AS 76 mJ P tot 326 W T J,max 175 °C T J, T STG-55 to 175 C T L 250 °C 1. Limited by T J,max 2. Pulse width t p limited by TJ,max 3. Starting T
UNITED SILICON CARBIDE INC. ABOUT In the fast-growing market of EV motor drives, UnitedSiC’s industry highest performance, lowest R (DS)-on FETs, with ratings at both 650 V and 1200 V, are quickly becoming the product of choice for EV power designers. SiC FETs are a major contributor to performance and reliability improvements, with overall system cost reduction in next UNITED SILICON CARBIDE INC. EVENT S Event: Power Conference/Wide Bandgap Conference 2020 Date: Dec 8-9, 2020 Time: 1:30pm to 5:00pm (CET) UnitedSiC is a. Minimizing EMI and switching loss for fast SiC FETs. ON DEMAND Join this webinar to discover how a simple RC snubber can effectively control turn-offVDS spikes.
3L ANP VS. 3L NP INVERTERS APPLICATION NOTE UnitedSiC_AN0023 – February 2020 Jonathan Dodge is a Senior Applications Engineer at United Silicon Carbide. Experience includes design of analog, digital,UF3C065030K4S
UF3C065030K4S. United Silicon Carbide’s FET products co-package its high-. performance F3 SiC fast JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits very fast switching using a 4-terminal TO-247- package and the best reverse recovery characteristics of any device of UNITED SILICON CARBIDE INC. UF3SC120009K4S UF3SC120009K4S. This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or SiUJ3N120035K3S
UJ3N120035K3S. United Silicon Carbide, Inc offers the high-performance G3 SiC. normally-on JFET transistors. This series exhibits ultra-low on resistance (RDS (ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS (ON) at VGS = 0 V is also ideal for current protectionUJ3N120065K3S
UJ3N120065K3S. UnitedSiC offers the high-performance G3 SiC normally-on JFET transistors. This series exhibits ultra-low on resistance (RDS (ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS (ON) at VGS = 0 V is also ideal for current protection circuitswithout the
XJ SIC SERIES
xJ SiC Series | 45mW - 1200V SiC Normally-On JFET | UJN1205K Datasheet Typical Performance - Dynamic Min Typ Max C iss 1020 C oss 154 C rss 146 C oss(er) 91 pF Q G 107 Q GD 74 Q GS 10 t DATASHEET DESCRIPTION UF3C065030K3S w Switch mode power supplies. w Power factor correction modules: 650V-27mW SiC FET. w Low intrinsic capacitance: DATASHEET. UF3C065030K3S. 3 CASE 1 2 CASE D (2) UTILIZING SILICON CARBIDE IN 80 PLUS CURRENT AVERAGE POWER Application Note USCi_AN0008– July 2016 Utilizing Silicon Carbide in 80 Plus Current Average Power Factor Correction John Bendel USCi_AN0008 – July 2016 Utilizing Silicon Carbide in 80 Plus Current Average Power Factor Correction 1* Products »
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NEW PRODUCT: SiC JFETs for Low Power AC/DC Flyback Converters > “The evolution of this power supply has created ever-greater > benefits for our customers, particularly with respect to energy > savings. Efficiency and reliability are paramount for them and this > latest design, with the support of UnitedSiC products, excels in > both respects.”>
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MIND THE BEND: WHY YOU SHOULDN’T CUT CORNERS WITH COMPONENTLEAD-FORMING
By Dr. Anup Bhalla, VP Engineering at UnitedSiC Abstract Semiconductor lead forming is necessary in many designs. This blog talks ...Read More
‘STANDBY’ FOR A BREAKTHROUGH IN FLYBACK CONVERTER LOSSES By Dr. Anup Bhalla, VP Engineering at UnitedSiC What would you do with $19 billion? According to the Natural Resources ...Read More
USING KELVIN CONNECTIONS TO ENHANCE SWITCHING EFFICIENCY IN SIC FETS By Dr. Anup Bhalla, VP Engineering at UnitedSiC Physics both gives and takes away. Devices built with materials that ...Read More
TYPICAL
APPLICATIONS
Electric Vehicle Chargers Whether for charging systems, Auxillary power units, or inverter drives themselves, SiC is enabling a revolution in electric vehicletransportation
Power Supplies
SiC enables quantum leaps in power supply metrics of efficiency, power density, and total cost. Variable Speed Motor Drives Electric Motors represent between 43% and 46% of all electricity end consumption. SiC can significantly reduce the losses associated withthese drives.
PV Inverters
SiC enables dramatic inverter size reduction through higher switching frequency while delivering higher efficiency.FOUNDED
IN 1999
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CONTACT US
UNITED SILICON CARBIDE, INC. 7 Deer Park Drive, Suite E Monmouth Junction, NJ 08852 For general inquiries: info@unitedsic.com For sales inquiries, please contact our worldwide sales partners. Phone: (732) 355-0550FAX: (732) 355-0522
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